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irGPS40B120UD insulated gate bipolar transistor with ultrafast soft recovery diode features v ces = 1200v v ce(on) typ. = 3.12v @ v ge = 15v, i ce = 40a, tj=25c 8/18/04 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 80 i c @ t c = 100c continuous collector current 40 i cm pulsed collector current 160 a i lm clamped inductive load current 160 i f @ t c = 25c diode continuous forward current 80 i f @ t c = 100c diode continuous forward current 40 i fm diode maximum forward current 160 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 595 p d @ t c = 100c maximum power dissipation 238 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) non punch through igbt technology. low diode vf. 10s short circuit capability. square rbsoa. ultrasoft diode reverse recovery characteristics. positive vce (on) temperature coefficient. super-247 package. benefits www.irf.com 1 benchmark efficiency for motor control. rugged transient performance. low emi. significantly less snubber required excellent current sharing in parallel operation. e g c n-channel parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 0.20 r jc junction-to-case - diode ??? ??? 0.83 c/w r cs case-to-sink, flat, greased surface ??? 0.24 ??? r ja junction-to-ambient, typical socket mount ??? ??? 40 recommended clip force 20 (2) ??? ??? n(kgf) wt weight ??? 6.0 (0.21) ??? g (oz) le internal emitter inductance (5mm from package) ??? 13 ??? nh thermal resistance super - 247? ultrafast co-pack igbt .com .com .com 4 .com u datasheet
irGPS40B120UD 2 www.irf.com electrical characteristics @ t j = 25c (unless otherwise specified) ref.fig. 5, 6 7, 9 10 11 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ??? ??? v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ??? 0.40 ??? v/c v ge = 0v, i c = 1.0ma, (25c-125c) v ce(on) collector-to-emitter saturation voltage ??? 3.12 3.40 i c = 40a v ge = 15v ??? 3.39 3.70 v i c = 50a ??? 3.88 4.30 i c = 40a, t j = 125c ??? 4.24 4.70 i c = 50a, t j = 125c v ge(th) gate threshold voltage 4.0 5.0 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ??? -12 ??? mv/c v ce = v ge , i c = 1.0ma, (25c-125c) g fe forward transconductance ??? 30.5 ??? s v ce = 50v, i c = 40a, pw=80s i ces zero gate voltage collector current ??? ??? 500 a v ge = 0v, v ce = 1200v ??? 420 1200 v ge = 0v, v ce = 1200v, t j = 125c v fm diode forward voltage drop ??? 2.03 2.40 i c = 40a ??? 2.17 2.60 v i c = 50a ??? 2.26 2.68 i c = 40a, t j = 125c ??? 2.46 2.95 i c = 50a, t j = 125c i ges gate-to-emitter leakage current ??? ??? 100 na v ge = 20v 9,10 11 ,12 8 ref.fig. parameter min. typ. max. units conditions qg total gate charge (turn-on) ??? 340 510 i c = 40a qge gate - emitter charge (turn-on) ??? 40 60 nc v cc = 600v q gc gate - collector charge (turn-on) ??? 165 248 v ge = 15v e on turn-on switching loss ??? 1400 1750 j i c = 40a, v cc = 600v e off turn-off switching loss ??? 1650 2050 v ge = 15v,r g = 4.7 ?, l =200h e tot total switching loss ??? 3050 3800 ls = 150nh t j = 25c e on turn-on switching loss ??? 1950 2300 t j = 125c e off turn-off switching loss ??? 2200 2950 j energy losses include "tail" and e tot total switching loss ??? 4150 5250 diode reverse recovery. t d(on) turn-on delay time ??? 76 99 i c = 40a, v cc = 600v t r rise time ??? 39 55 v ge = 15v, r g = 4.7 ? l =200h t d(off) turn-off delay time ??? 332 365 ns ls = 150nh, t j = 125c t f fall time ??? 25 33 c ies input capacitance ??? 4300 ??? v ge = 0v c oes output capacitance ??? 330 ??? pf v cc = 30v c res reverse transfer capacitance ??? 160 ??? f = 1.0mhz t j = 150c, i c = 160a, vp =1200v v cc = 1000v, v ge = +15v to 0v r g = 4.7 ? t j = 150c, vp =1200v v cc = 900v, v ge = +15v to 0v, r g = 4.7 ? erec reverse recovery energy of the diode ??? 3346 ??? j t j = 125c t rr diode reverse recovery time ??? 180 ??? ns v cc = 600v, i f = 60a, l =200h i rr diode peak reverse recovery current ??? 50 ??? a v ge = 15v,r g = 4.7 ?, ls = 150nh switching characteristics @ t j = 25c (unless otherwise specified) 23 ct1 ct4 wf1 wf2 13,15 14, 16 ct4 wf1 wf2 22 4 ct2 ct3 wf4 17,18,19 20, 21 ct4,wf3 rbsoa reverse bias safe operting area full square scsoa short circuit safe operting area 10 ??? ??? s .com .com .com .com 4 .com u datasheet
irGPS40B120UD www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t js 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v 0 20 40 60 80 100 120 140 16 0 t c (c) 0 20 40 60 80 100 i c ( a ) 0 50 100 150 200 t c (c) 0 100 200 300 400 500 600 700 p t o t ( w ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 2 s 10 s 100 s 1ms 10ms dc 10 100 1000 10000 v ce (v) 1 10 100 1000 i c a ) .com .com .com .com 4 .com u datasheet
irGPS40B120UD 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 8 - typ. diode forward characteristics tp = 80s fig. 7 - typ. igbt output characteristics t j = 125c; tp = 80s 0123456 v ce (v) 0 20 40 60 80 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0123456 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0123456 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 01234 v f (v) 0 10 20 30 40 50 60 70 80 i f ( a ) -40c 25c 125c .com .com .com .com 4 .com u datasheet
irGPS40B120UD www.irf.com 5 fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 125c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10s 5101520 v ge (v) 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 20a i ce = 40a i ce = 80a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 20a i ce = 40a i ce = 80a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 20a i ce = 40a i ce = 80a 0 5 10 15 20 v ge (v) 0 50 100 150 200 250 300 350 400 450 500 i c e ( a ) t j = 25c t j = 125c t j = 125c t j = 25c .com .com .com .com 4 .com u datasheet
irGPS40B120UD 6 www.irf.com fig. 14 - typ. switching time vs. i c t j = 125c; l=200h; v ce = 600v r g = 4.7 ? ; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 125c; l=200h; v ce = 600v r g = 4.7 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 125c; l=200h; v ce = 600v i ce = 40a; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 125c; l=200h; v ce = 600v i ce = 40a; v ge = 15v 0 20406080 i c (a) 0 500 1000 1500 2000 2500 3000 3500 4000 4500 e n e r g y ( j ) e off e on 20 40 60 80 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 5 10 15 20 25 r g ( ? ) 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 e n e r g y ( j ) e on e off 0 5 10 15 20 25 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on .com .com .com .com 4 .com u datasheet
irGPS40B120UD www.irf.com 7 fig. 17 - typical diode i rr vs. i f t j = 125c fig. 18 - typical diode i rr vs. r g t j = 125c; i f = 40a fig. 20 - typical diode q rr v cc = 600v; v ge = 15v;t j = 125c fig. 19 - typical diode i rr vs. di f /dt v cc = 600v; v ge = 15v; i ce = 40a; t j = 125c 0 20 40 60 80 100 i f (a) 0 10 20 30 40 50 60 i r r ( a ) r g = 4.7 ? r g = 22 ? r g = 47 ? r g = 100 ? 0 50 100 150 r g ( ?) 0 10 20 30 40 50 60 i r r ( a ) 0 500 1000 1500 di f /dt (a/s) 0 10 20 30 40 50 60 i r r ( a ) 0 500 1000 1500 di f /dt (a/s) 0 1 2 3 4 5 6 7 8 9 q r r ( c ) 4.7 ? 22 ? 47 ? 100 ? 80a 40a 20a .com .com .com .com 4 .com u datasheet
irGPS40B120UD 8 www.irf.com fig. 21 - typical diode e rr vs. i f t j = 125c fig. 23 - typical gate charge vs. v ge i ce = 40a; l = 600h fig. 22 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 20 40 60 80 100 i f (a) 0 500 1000 1500 2000 2500 3000 3500 e n e r g y ( j ) 4.7 ? 22 ? 47 ? 100 ? 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 100 200 300 400 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 600v 800v .com .com .com .com 4 .com u datasheet
irGPS40B120UD www.irf.com 9 fig 25. normalized transient thermal impedance, junction-to-case (diode) fig 24. normalized transient thermal impedance, junction-to-case (igbt) 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc .com .com .com .com 4 .com u datasheet
irGPS40B120UD 10 www.irf.com l rg 80 v dut 1000v fig.c.t.1 - gate charge circuit (turn-on) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - rbsoa circuit fig.c.t.4 - rbsoa circuit fig.c.t.5 - rbsoa circuit d c driver dut 900v l rg vcc diode clamp / dut dut / driver - 5v rg vcc dut r = v cc i cm .com .com .com .com 4 .com u datasheet
irGPS40B120UD www.irf.com 11 fig. wf.1 - typ. turn-off loss waveform @ tj=125c using fig. ct.4 -100 0 100 200 300 400 500 600 700 800 900 1000 1100 -0.20 0.00 0.20 0.40 0.60 0.80 time(s) v ce (v) -10 0 10 20 30 40 50 i ce (a) 90% i ce 5% v ce 5% i ce eo f f l o s s tf fig. wf.2 - typ. turn-on loss waveform @ tj=125c using fig. ct.4 -100 0 100 200 300 400 500 600 700 800 900 4.10 4.20 4.30 4.40 4.50 4.60 time (s) v ce (v) -10 0 10 20 30 40 50 60 70 80 90 i ce (a) test current 90% test current 5% v ce 10% test current fig. wf.3 - typ. diode recovery waveform @tj=125c using fig. ct.4 -800 -700 -600 -500 -400 -300 -200 -100 0 100 200 300 -0.25 0.25 0.75 time (s) v f (v) -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 i f (a) pea k i rr t rr q rr 10% pe a k irr fig. wf.4 - typ. s.c. waveform @ tc=150c using fig. ct.3 0 100 200 300 400 500 600 700 800 900 1000 -5.00 0.00 5.00 10.00 15.00 time (s) v ce (v) 0 50 100 150 200 250 300 350 400 450 500 i ce (a) v ce i ce .com .com .com .com 4 .com u datasheet
irGPS40B120UD 12 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 v cc = 80% (v ces ), v ge = 20v, l = 100 h, r g = 4.7 ?. super-247? package outline b ? 1.60 [.063] 12 0.25 [.010] ba 3 0.13 [.005] 2.35 [.092] 1.65 [.065] 2.15 [.084] 1.45 [.058] 5.50 [.216] 4.50 [.178] e e 3x 1.60 [.062] 1.45 [.058] 16.10 [.632] 15.10 [.595] 20.80 [.818] 19.80 [.780] 14.80 [.582] 13.80 [.544] 4.25 [.167] 3.85 [.152] 5.45 [.215] 1.30 [.051] 0.70 [.028] 13.90 [.547] 13.30 [.524] 16.10 [.633] 15.50 [.611] 4 0.25 [.010] b a 4 3.00 [.118] 2.00 [.079] a 2x r max. section e-e 2x 1.30 [.051] 1.10 [.044] 3x 1. dime ns ioning and t ole rancing pe r as me y14.5m-1994. 2. dime ns ions are s hown in mill ime t e rs [inche s ] 3. cont rol ling dime ns ion: mil lime t e r not e s : 4 . ou t l ine conf or ms t o je de c ou t l ine t o-2 74 aa 3 - s ource 2 - drain 1 - gat e 4 - drain 3 - e mit t e r 4 - col l e ct or 1 - gat e 2 - col l e ct or l e ad as s i gn me n t s mos f e t igbt c logo assembly lot code e xample: this is an irfps37n50a with international rectifier irfps37n50a a8b9 0020 date code part numbe r top (yyww) yy = year ww = week assembly lot code a8b9 super-247? part marking information .com .com .com 4 .com u datasheet

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